We present a semiclassical study of a transport process, the tunneling, in the presence of a magnetic field and a dissipative environment. We have found that the problem can be mapped onto an effective one-dimensional one, and the tunneling rate is strongly affected by the magnetic field, such as a complete suppression by a large parallel magnetic field, an example of the dynamical localization...

This work focuses on understanding the electronic properties of materials to enhance performance Tunnel Field Effect Transistor (TFET) through Density Functional Theory (DFT) simulations. Material selection prefers a p-type material with in-plane high density state (DOS) (and low out-of-plane effective mass, m*, where defined for many layer systems), and valence band maxima (VBM) energy stacked...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. The effect depends on the interrelation between the dynamics of tunneling and momentum exch...

The electric field intensity of the compressed ultrarelativistic electron beams is approaching GV/m levels, which is sufficient to cause observable tunneling effect in the low band gap materials. In this article the tunneling ionization rate is estimated for the experimentally available electron beam parameters, and a proposed proof of principle experiment is outlined. Tunneling effect has expo...

Two single-molecule magnets are coupled antiferromagnetically to form a supramolecule dimer. We study the coupling effect and tunneling process by means of the numerical exact diagonalization method, and apply them to the recently synthesized supramoleculer dimer [Mn4]2. The model parameters are calculated for the dimer based on the tunneling process. The absence of tunneling at zero field and ...

Dissociation of HeRh2+ in high electric field occurs by tunneling of a neutral He out of the ion. This tunneling process occurs most readily when it is rotated 180. from its desorbed orientation. This rotation time is measured to be 790221 fs. The tunneling effect is supported by a very strong isotope effect observed when 4 ~ e is replaced by 3 ~ e , and also by a WKB calculation of barrier pen...

We calculate the tunneling current in a quantum Hall bilayer system in the strong magnetic field limit. We model the bilayer electron system as two Wigner crystals coupled through interlayer Coulomb interactions, treated in the continuum limit. We generalized the Johansson and Kinaret (JK) model and were able to study the effect of the low energy out-of-phase magnetophonon modes produced as a r...