In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device mixed-mode simulations with experimentally calibrated tunneling parameters. This new T-CMOS utilizes two different types of currents to form three output voltage states: (1) source-to-drain current; (2) conventional source-to-channel current. To a ha...

We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing secondary path in whole-chip electrostatic discharge (ESD) protection network. In this paper, ESD characteristics of traditional point TFET, line TFET Ge-source are investigated using technology computer-aided design (TCAD) simulations, an improved TFET-based scheme proposed. It foun...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...

We discuss how to control dc Josephson current by influencing the structure and nonequilibrium population of Andreev levels via external electrostatic gates, current injection and electromagnetic radiation. In particular we will consider the ”giant” Josephson critical current in ”long” SIS tunnel junctions and the regular and anomalous nonequilibrium Josepson currents in three terminal SNS junc...

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...