A transconductance amplifier with extended bandwidth, which is a critical block in various applications including amplifiers, filters and DACs is presented. The presented technique introduces a differential-mode negative capacitance while introduces the common-mode positive capacitance such that it extends the differential-mode bandwidth and compensates the common-mode stability. The proposed t...

Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we hav...

This paper describes novel transconductor and an integrator circuits which can be used in integrated video frequency filters in bipolar technology. The transconductor consists of a parallel connection of a passive nominal transconductance and an active variable transconductance, resulting in good high frequency performance up to 70 MHz and less than 1% linearity error for input signals up to 2V...

A transconductance amplifier with extended bandwidth, which is a critical block in various applications including amplifiers, filters and DACs is presented. The presented technique introduces a differential-mode negative capacitance while introduces the common-mode positive capacitance such that it extends the differential-mode bandwidth and compensates the common-mode stability. The proposed t...

Recess Technologies in GaN HEMTs were simulated to check the influence of recess in device improvement process.In this work different recess are consider and their influence on the device characteristic is carried out. Gate recess improves device transconductance but main drawback of this is reduction in drain current. For most of the sensing and communication device applications both drain cur...

A two-input two-output (TITO) current-mode universal biquad using only four dual-output operational transconductance amplifier (DO-OTAs) and two grounded capacitors is described. By appropriately connecting the input and output terminals, the proposed circuit can provide lowpass, bandpass, highpass, bandstop and allpass current responses. The filter also offers an independent electronic control...

This paper presents a two stage operational transconductance amplifier realized using floating gate MOSFETs in differential inputs. A configuration of two stage operational transconductance amplifier using floating gate MOSFET for low power and low voltage applications is presented. Here we design a two stage operational transconductance amplifier using floating gate MOSFET in HSPICE 180nm CMOS...

Performance limits of silicon MOSFETs are examined by a simple analytical theory augmented by self-consistent Schrödinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the oxide thickness approaches zero is also ...

This paper presents the design of a low power second-order continuous-time sigma-delta modulator for low power applications. The loop filter of this modulator has been implemented based on the nonlinear transconductance-capacitor (Gm-C) by employing current-mode technique. The nonlinear transconductance uses floating gate MOS (FG-MOS) transistors that operate in weak inversion region. The propo...

We demonstrate an alternative path for achieving high-transconductance organic transistors by assembling bilayers of pentacene onto random arrays of single-walled carbon nanotubes. We show here that, by varying the connectivity of the underlying nanotube network, the channel length of a thin-film transistor can be reduced by nearly two orders of magnitude—thus, enabling the increase of the devi...