Titanium Nitride (TiN) is a wear resistant and complementary metal oxide silicon (CMOS) compatible material that is increasingly being investigated for MEMS applications. Incorporating any new material into a MEMS device requires the development of a processing strategy. This paper discusses a wet-etching strategy for patterning and releasing TiN features on Cr sacrificial layers. Filtered arc ...

Tin is a naturally occurring element. It is a silver-white, malleable, and somewhat ductile metal. The earth's crust contains about 2–3 ppm tin, comprising 0.0006% of the earth's crust. Major uses of tin include cans and containers, electrical, construction, and transportation. Industrially important tin compounds can be categorized as inorganic (those without a tin-carbon bond) and organic (th...

abstracta novel floatation-spectrophotometric extraction method was developed for the recovery of tin (ii) from aqueous samples prior to determination by uv spectrophotometric detection. the method is based on the formation of a complex between tin (ii) and kalmagyte in ph=8. the complex is floated in the interface of n-hexane and aqueous phases. after removing the aqueous phase, the floated pa...

Titanium nitride (TiN) is one of the most well-established engineering materials nowadays. TiN can overcome most of the drawbacks of palsmonic metals due to its high electron conductivity and mobility, high melting point and due to the compatibility of its growth with Complementary Metal Oxide Semiconductor (CMOS) technology. In this work, we review the dielectric function spectra of TiN and we...

A kidney tubular basement membrane (TBM) component that is bound by antibodies from individuals with anti-TBM antibody-associated tubulointerstitial nephritis (TIN) was purified and characterized (TIN antigen). TIN antigen was prepared from rabbit TBM by extraction with guanidine and purified by ion-exchange, gel filtration, and reversed-phase chromatography. Based upon yields of protein and an...

TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electro...

Title of Document: TIN WHISKER RISK ASSESSMENT STUDIES Tong Fang, Doctor of Philosophy, 2005 Directed By: Professor Michael G. Pecht Department of Mechanical Engineering As a result of the global transition to lead (Pb)-free electronics, pure tin and high tin lead-free alloys have been widely adopted by the electronics part manufacturers as the materials of terminal finishes. However, electrica...

Objectives: Searching for testicular intraepithelial neoplasia (TIN; carcinoma in situ) in the contralateral testis of patients with germ cell tumour (GCT) may early disclose contralateral GCT. A single biopsy of the testis is thought to accurately detect TIN. Reports on false-negative biopsies have challenged this view. We investigated whether systematic two-site biopsies are more sensitive th...

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type ti...