We demonstrate a method to fabricate ultra-thin, ultra-smooth and low-loss silver (Ag) films using a very thin germanium (Ge) layer as a wetting material and a rapid post-annealing treatment. The addition of a Ge wetting layer greatly reduces the surface roughness of Ag films deposited on a glass substrate by electron-beam evaporation. The percolation threshold of Ag films and the minimal thick...

The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of amorphous indium thin film. The later film is pre-deposited on glass with thermal evaporation. We have studied the effect of the temperature and the annealing time on the structural and morphological properties In2S3 thin films. The X-ray diffraction (XRD) shows a good crystallinity found until the anneali...

As an extension of combinatorial molecular layer epitaxy via ablation of perovskite oxides by a pulsed excimer laser, we have developed a laser molecular beam epitaxy (MBE) system for parallel integration of nano-scaled thin films of organic-inorganic hybrid materials. A pulsed infrared (IR) semiconductor laser was adopted for thermal evaporation of organic halide (A-site: CH3NH3I) and inorgani...

Cu(InGa)(SeS)2 thin films have been prepared using multi source thermal co-evaporation. The incorporation of the volatile chalcogen species Se and S into the films depends on the fluxes of the evaporated species during growth and the relative [Cu]/[In+Ga] and [Ga]/[In+Ga] compositions. The dependence of the relative Se and S incorporation in Cu(InGa)(SeS)2 on the substrate temperature is charac...

silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. the layers are produced with electron gun evaporation method under ultra-high vacuum condition. the optical reectance and the transmittance of produced layers were measured by using spectrophotometer. the optical functions such as, real and imaginary part of refractive index, real and imaginar...

Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-based precursor solution which has better wetting properties and fast evaporation rate was prepared. ...

We report on the design, operation, and performance of a thermal evaporation chamber capable of evaporating organic thin films. Organic thin films are employed in a diverse range of devices and can provide insight into fundamental physical phenomena. However, growing organic thin films is often challenging and requires very specific deposition parameters. The chamber presented here is capable o...

Silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. The layers are produced with electron gun evaporation method under ultra-high vacuum condition. The optical Reectance and the Transmittance of produced layers were measured by using spectrophotometer. The optical functions such as, real and imaginary part of refractive index, real and imaginar...