Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental m...

Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level [Mg] ≈2 × 1019 cm−3 is performed. In a sequence MOCVD runs, operational conditions, including temperature and flow rate precursors, are maintained except for intentionally larger flows hydrogen carrier gas fed into reactor. By employing largest 25 slm in this study, performa...

Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia corrosion resistance, high biological compatibility, mechanical strength, which are the basis for their application medical practice. Metal-organic vapor deposition (MOCVD) is a promising method fabricate Ir Pt nanomaterials, multilayers, heterostructures. Its advantages i...

A three-dimensionally interconnected hexagonal boron nitride (3Di-hBN) networked Cu-Ni (3DihBN-Cu-Ni) composite was successfully synthesized in situ using a simple two-step process which involved the compaction of mixed powders (70 wt.% Cu and 30 Ni) into disc followed by metal-organic chemical vapor deposition (MOCVD) at 1000 <sup>o</sup>C. During MOCVD, alloy grains acted as templ...

The physical properties of metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) deposited HfZrO4 films have been analyzed in detail by atom probe tomography, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, transmission electron microscopy, atomic force microscopy, variable angle spectroscopic ellipsometry as well as temperature dependent gr...

Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature. Evidence of two impurity levels results from the analysis of the observed peaks in the conductance curves, whose positions and strengths are temperature dependent. The experimental results are...

Scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS, AES) were used to study MOCVD of Cu-clusters on the mixed terminated ZnO(10% 10) surface in comparison to MBE Cu-deposition. Both deposition methods result in the same Cu cluster morphology. After annealing to 670 K the amount of Cu visible above the oxide surface is found to decrease substantially, indicating a sub...

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitatio...

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

Chemical deposition methods like MOD and MOCVD are promising approaches for coated conductors (CCs) due to their reduced cost and easy scaling. High quality La2Zr2O7 (LZO) buffer layers were prepared by MOD on Ni-5%at.W (NiW) RABiTS and subsequent YBCO layers (450 to 800 nm thick) were deposited by pulsed injection MOCVD, leading to a simple low cost architecture NiWRABiTS/LZOMOD/YBCOMOCVD. In ...