نتایج جستجو برای: thermal chemical vapor deposition tcvd
تعداد نتایج: 673962 فیلتر نتایج به سال:
A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate CNTs by thermal chemical vapor deposition (TCVD) process at both 350 °C 400 °C. Based scanning electron microscopy (SEM) Raman spectroscopy analyses, good quality demon...
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments...
the lack of complete understanding of the substrate effects on carbon nanotubes (cnts) growth poses a lot oftechnical challenges. here, we report the direct growth of nanostructures such as the cnts on stainless steel 304and brass substrates using thermal chemical vapor deposition (tcvd) process with c2h2 gas as carbon sourceand hydrogen as supporting gas mixed in ar gas flow. we used an especi...
Momentum and thermal boundary-layer thickness in a stagnation flow chemical vapor deposition reactor
Explicit expressions have been derived for momentum and thermal boundary-layer thickness of the laminar, uniform stagnation flows characteristic of highly convective chemical vapor deposition pedestal reactors. Expressions for the velocity and temperature profiles within the boundary layers have also been obtained. The results indicate that, to leading order, the momentum boundary-layer thickne...
nanoporous graphene which is used as nanosorbent was synthesized by chemical vapor deposition method via porous zinc oxide nanocatalyst. the reaction was carried out using methane as the carbon source and hydrogen as the carrier gas in a ratio of 4:1 at the temperature ranging 900-1050°c for 2-50 min. the product was characterized by scanning electron microscopy, transmission electron microscop...
Since the introduction of electron beam (EB) physical vapour deposition (PVD) thermal barrier coatings (TBCs) and their application to moving components in the hot gas stream, erosion has become a prime concern. EB PVD TBCs, due to their unique columnar microstructure are far more strain tolerant than their plasma sprayed (PS) counter parts and can thus be used under more exacting operating con...
chemical vapor deposition (cvd) is one of the most popular methods for producing carbon nanotubes (cnts). the growth rate of cnts based on cvd technique is investigated by using a numerical model based on finite volume method. inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal cvd reactor at atmospheric pressure. in thi...
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses revealed that as-deposited consisted of a S...
A systematic study was conducted to understand the influences of catalyst combination as Ni-Co NPs on carbon nanotubes (CNTs) grown by Chemical Vapor Deposition (TCVD). The DC-sputtering system was used to prepare Co and Ni-Co thin films on silicon substrate. Ni- Co nanoparticles were used as metal catalyst for growing carbon nanotubes from acetylene (C2H2) gas in 850 ̊ C during 15 min. Carb...
The carbon nanomaterails having the brittle star-like morphology (bs-CNMs) could be synthesized using C2H2-SF6 gases under thermal chemical vapour deposition (TCVD) system. The micro-sized Ni grains were used as the catalyst for bs-CNMs on the Al2O3 substrate. The bs-CNMs could be obtained under the condition of the source gases flow rates at 100sccm for C2H2 and 50sccm for SF6. The bs-CNMs wer...
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