The reaction between bis(p-methoxyphenyl)telluroxide and various substituted phenylhydrazines has recently been reported [1]. In this reaction the phenylhydrazines are converted to the corresponding hydrocarbons and nitrogen, also producing bis(p-methoxyphenyl)telluride and an unsymmetrical telluride, resulting form aryl exchange. As a part of our investigation of the reactions of tellurium dio...

We show that superlattices based on zero-gap semiconductors such as graphene and mercury telluride exhibit characteristic Bloch–Zener oscillations that emerge from the coherent superposition of Bloch oscillations and multiple Zener tunneling between the electron and hole branch. We demonstrate this mechanism by means of wave packet dynamics in various spatially periodically modulated nanoribbon...

In this paper, we discuss the construction of a small apparatus less than 3cm large to characterize the thermoelectric properties of a small thermoelectric sample that can be easily used in cryogenic environments. The device was then used to measure the thermal conductivity of silicon and the Seebeck coefficient of thin film bismuth telluride. Thin film bismuth telluride has become of particula...

The through-thickness thermoelectric behavior of continuous carbon fiber epoxy-matrix composites is greatly improved by adding tellurium particles (13 vol.%), bismuth telluride particles (2 vol.%) and carbon black (2 vol.%). The thermoelectric power is increased from 8 to 163 lV/K, the electrical resistivity is decreased from 0.17 to 0.02.X.cm, the thermal conductivity is decreased from 1.31 to...

Bismuth telluride nanowires are of interest for thermoelectric applications because of the predicted enhancement in the thermoelectric figure-of-merit in nanowire structures. In this letter, we carried out temperature-dependent thermal diffusivity characterization of a 40 nm diameter Bi2Te3 nanowires/alumina nanocomposite. Measured thermal diffusivity of the composite decreases from 9.2310−7 m2...

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride-cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an "inverted" type at a critical thickness d(c). We show that this transit...

Recent experimental work on lanthanum telluride has confirmed its significant potential as an n-type material for high temperature thermoelectric (TE) power generation application. The phase of interest, La3.xTe4, has a Th3P4 defect structure where x is the lanthanum vacancy with values ranging between 0 and 1/3. Thermoelectric properties change rapidly with x since the carrier concentration, «...

The title hafnium germanium telluride, HfGeTe(4), has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe(4) is isostructural with stoichiometric ZrGeTe(4) and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe(4) adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensio...