نتایج جستجو برای: tcvd
تعداد نتایج: 31 فیلتر نتایج به سال:
A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate CNTs by thermal chemical vapor deposition (TCVD) process at both 350 °C 400 °C. Based scanning electron microscopy (SEM) Raman spectroscopy analyses, good quality demon...
In this research, the effect of catalyst type on the CNTs synthesis was investigated. The carbonnanotubes (CNTs) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using Thermal chemical vapor deposition (TCVD) method. The catalysts have theimportant role for the growth carbon nanotubes (CNTs). Acetylene gas (C2H2) diluted by NH3 wasused as the reac...
در این تحقیق نانوذرات هسته-پوسته cofe2o4@c طی دو مرحله فرآیند شیمیایی سنتز گردیدند. در مرحله ی اول نانوذرات cofe2o4 با روش میکروامولسیون و با استفاده از سیستم میسل معکوس شبه چهارتایی آب/ایزواکتان/بوتانول/ستیل تری متیل آمونیوم برومید(ctab) سنتز گردیدند. سنتز در دو شرایط مختلف نسبت مولی آب به عامل اصلاح کننده سطحی 8 و 10 انجام شد. مرحله دوم مربوط به سنتز پوسته کربنی بود که با کمک روش نشانش شیمیای...
in this research, the effect of catalyst type on the cnts synthesis was investigated. the carbonnanotubes (cnts) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using thermal chemical vapor deposition (tcvd) method. the catalysts have theimportant role for the growth carbon nanotubes (cnts). acetylene gas (c2h2) diluted by nh3 wasused as the reac...
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments...
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses revealed that as-deposited consisted of a S...
A systematic study was conducted to understand the influences of catalyst combination as Ni-Co NPs on carbon nanotubes (CNTs) grown by Chemical Vapor Deposition (TCVD). The DC-sputtering system was used to prepare Co and Ni-Co thin films on silicon substrate. Ni- Co nanoparticles were used as metal catalyst for growing carbon nanotubes from acetylene (C2H2) gas in 850 ̊ C during 15 min. Carb...
Using C2H2, 112 and As gases at 550'C, carbon nanotubes were fabricated on the surfaces of twosubstrates coated by nano thin layers of metal catalysts by DC magnetron sputtering. AYStamless steel andFe/CteAl, by thermal chemical vapor deposition (TCVD) The surface properties of the substrates wereparticularly investigated, and the effect of treatment of the substrates on the CNT's growth is cri...
using c2h2, 112 and as gases at 550'c, carbon nanotubes were fabricated on the surfaces of twosubstrates coated by nano thin layers of metal catalysts by dc magnetron sputtering. aystamless steel andfe/cteal, by thermal chemical vapor deposition (tcvd) the surface properties of the substrates wereparticularly investigated, and the effect of treatment of the substrates on the cnt's growth is cri...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید