This work considers a methodology and its application in a memory system, in such a way that through well defined steps, it makes possible the use of not qualified memory components for space area with the specific degree of reliability. The methodology uses the application of the screening technique with the purpose to know the characteristics of reliability of these components and the elimina...

modern processor architectures is a very important and timely problem, as discussed in another article in this issue (“Random-Access Data Storage Components in Customized Architectures,” by L. Nachtergaele, F. Catthoor, and C. Kulkarni). This problem is especially relevant in embedded applications, where cost issues such as memory footprint and power consumption are vital. In this article, we s...

An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is proposed in this paper. Compared to the 6T SRAM and other existing 8T cells, power of hold mode reduced significantly. The stability parameters are calculated using butterfly method also N-curve method. Proposed achieves better write margin slightly less read than SRAM. technique consumes 790 PW mode, w...

Spin-Transfer Torque Magnetoresistive RAM (STTMRAM) is being intensively explored as a promising on-chip last-level cache (LLC) replacement for SRAM, thanks to its low leakage power and high storage capacity. However, the write penalties imposed by STT-MRAM challenges its incarnation as a successful LLC by deteriorating its performance and energy efficiency. This write performance characteristi...

As modern technology is spreading fast, it is very important to design low power, high performance, fast responding SRAM(Static Random Access Memory) since they are critical component in high performance processors. In this paper we discuss about the noise effect of different SRAM circuits during read operation which hinders the stability of the SRAM cell. This paper also represents a modified ...

In the arsenal of resources for improving computer memory system performance, predictors have gained an increasing role in the past few years. They can suppress the latencies when accessing cache or main memory. In our previous work we proposed predictors that not only close the opened DRAM row but also predict the next row to be opened, hence the name ‘Complete Predictor’. It requires less tha...

Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) pro...

Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. Simply replacing DRAM with MRAM will make main memory non-volatile, but it will not improve file system performance. However, effective use of MRAM in a file system has the potential to significantly imp...