نتایج جستجو برای: sog sacrificial layer

تعداد نتایج: 285153  

Journal: :IEICE Transactions 2007
Takuji Ikemoto Yasuo Kokubun

We propose and demonstrate a new fabrication process of a microchannel using the Damascene process. This process aims to integrate photonic circuits with microchannels fabricated in a glass film. The microchannel is fabricated by the removal of the sacrificial layer after a sacrificial layer is formed by the Damascene process and the cover is formed by sputter deposition. A thin cover layer can...

Journal: :Journal of Physics: Conference Series 2006

2004
G. P. Nikishkov

The finite element procedure is developed for the solution of three-dimensional geometrically nonlinear problems with small strains and large rotational and translational displacements. Updated Lagrangian formulation is used with controlling strains and stresses at local coordinate frames at element integration points. Equilibrium iterations at each step are performed according to the Newton-Ra...

2004
X. C. Jin I. Ladabaum

Major steps used in fabricating surface micromachined capacitive ultrasonic immersion transducers are investigated in this paper. Such steps include membrane formation and cavity sealing under vacuum. Three transducer membrane structures are evaluated: a nitride membrane with an LTO sacrificial layer; a polysilicon membrane with an LTO sacrificial layer; and a nitride membrane with a polysilico...

2013
Kia Hian Lau Archit Giridhar Sekar Harikrishnan Nalam Satyanarayana Sujeet K. Sinha

This paper presents a successful method for releasing high aspect ratio SU-8 micro-structures by the use of positive photoresist (AZ 4620) as sacrificial layer. The AZ 4620 photoresist sacrificial layer was dissolved by the SU-8 developer (propylene glycol monomethyl ether acetate). Thus, this process reduces the need for complex microfabrication steps and equipments which are otherwise require...

2017
Vikram Passi Ulf Sodervall Bengt Nilsson Goran Petersson Mats Hagberg Christophe Krzeminski Emmanuel Dubois Bert Du Bois Jean-Pierre Raskin

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Ba...

2008
Chao Wang Xiaobao Geng Haixia Zhang

The fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide is the sacrificial layer which solve stiction problem in proc...

2008
Haim H. Bau Joseph Grogan

Several techniques for fabrication of nanochannels on both glass and silicon substrates have been investigated. The techniques investigated here include glass to glass anodic bonding with an intermediate layer of amorphous silicon, silicon to silicon anodic bonding with an intermediate layer of glass, and AuAu thermo-compression bonding of silicon wafers. In each case, the conduit’s height is d...

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