نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

2001
Jaap Hoekstra Janaina Guimaraes

To benefit from the reduction of the devices’ feature sizes new circuit concepts can be introduced. These new circuits will require new devices, such as singleelectronic devices. Single-electronics devices are capable of controlling the transport of only one electron. In this manner, the charge transfer through the device is quantized. However, single-electronics is still a highly experimental ...

2013
Amine Touati Samir Chatbouri Nabil Sghaier Adel Kalboussi

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this stru...

Journal: :journal of modern processes in manufacturing and production 2015
majid molaie

using of colloids and polymeric microparticles are gradually increasing. it is observed that thepositive effects of particles stems in both traditional applications such as column pickings,coatings and paints to more recent technologies in diagnostics, drug delivery and optical devicesare well documented. this review focuses on importance of colloids and covers theirapplications on three level:...

Journal: :IJUC 2007
Takahide Oya Tetsuya Asai Yoshihito Amemiya

In this paper, we propose a novel single-electron device for computation of a Voronoi diagram (VD). A cellular-automaton model of VD formation [18] was used to construct the device that consisted of three layers of a 2-D array of single-electron oscillators. Through extensive numerical simulations, we show pattern formation on the proposed device and demonstrate the VD computation.

A. Shahhoseini, K. Saghafi, M. K Moravvej-Farshi, R. Faez,

In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...

Journal: :علوم 0
محمداسماعیل عظیم عراقی me azimaraghi دانشگاه خوارزمی صبح ناز ریاضی sn riazi دانشگاه آزاد سالار پورتیمور salar porteamor دانشگاه آزاد

in the present study, we investigate dc conduction mechanism of electron beam evaporated   bromoaluminium phthalocyanine (bralpc) thin films using aluminum and gold electrodes. the current-voltage characteristics of sandwich type device are evaluated for the temperature range 298-413k under dark conditions. it is observed that the current passing through the device is increased by increasing te...

2005
Tetsuya Asai

A promising area of research in nanoelectronics is the development of electrical systems that imitate the dynamics of life. To proceed toward this goal, I have proposed CMOS and single-electron devices that imitates the behavior of neural networks and a reaction-diffusion system, which is a chemical complex system producing dynamic, self-organizing phenomena in the natural world [1], [2]. Const...

2016
Monika Gupta

Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies. The goal of this paper is to discuss about the basic physics, applications of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. Single-electron transistor (SET) is a key element of curr...

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