Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems. Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyo...

Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 µm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO(2) suppo...

Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires....

The electrodeposition at room temperature of silicon and germanium nanowires from the airand water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germ...

The optical properties of four different silicon nanowire structures were investigated. Two of the samples consisted of spheres of nanocrystalline silicon en-capsulated by silicon oxide nanowires, with other two consisting of crystalline silicon nanowires coated by silicon oxide shells. The nanostructures produced by oxide assisted growth consisted of spheres of crystalline silicon encapsulated...

Metal oxides such as ZnO, SnO2 and W2O3 with super properties are widely used in the different fields of science and proper synthesis of these materials is of the great importance. In this work, some metal oxides with nano structures including SnO2 nanopyramids, V2O5 nanowires and hierarchical structure of SnO2 nan...

ZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires....

The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nan...

Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location ...

A simple method for fabricating vertically stacked single-crystal silicon nanowires on standard bulk silicon wafers is presented. The process uses inductively coupled plasma (ICP) etching to create silicon fins with uneven yet controllable vertical profiles. The fins are then thermally oxidized in a self-limiting process, and the narrow regions are completely consumed to create multiple nanowir...