Silicon Carbide as an inorganic material possesses properties like high thermochemical stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is therefore, widely used in the making of refractory, semiconductor devices, combustion engines, etc. Being a nonoxide, it has a tendency to get oxidized at elevated temperature under oxidizing atmosphere. Oxidation of...

Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires....

The microstructure of three different nanocrystalline materials with hexagonal crystal structure are studied by X-ray diffraction peak profile analysis. The crystallite size distribution and the dislocation structure are determined in plasmathermal silicon nitride powder, sintered tungsten carbide and severely deformed titanium and are compared with transmission electron microscopy (TEM) result...

The corrosion resistance of nanopowders of borides and carbides of metals of IV-VIB groups, as well as of silicon carbide, was studied in the standard nickeling electrolytes. As objects of study, nanopowders with the content of the main phase 91.8-97.6% and with the average particle size 32-78 nm were used. Their corrosion resistance was evaluated depending on the acidity of the electrolyte, te...

Near-isotropic pyrolytic carbon containing a small amount of co-deposited silicon carbide has been used for years as the materials from which prosthetic heart valves are fabricated [ 1 ]. Silicon carbide was introduced into this material to increase the hardness and thereby the wear resistance of the material. Silicon carbide, however, has poor thromboresistance relative to pyrolytic carbon, so...

1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for s...

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carb...

The mobility of carriers in the channel of silicon carbide is significantly lower than in equivalent silicon devices. This results in a significant increase in on-state resistance in comparison to theoretical predictions and is hindering the uptake of silicon carbide technology in commercial circuits. The density of interface traps at the interface be‐ tween silicon carbide and the dielectric f...

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. T...