Fine, monophasic silicon carbide powder has been synthesized by direct solid-state reaction of its constituents namely silicon and carbon in a 2.45 GHz microwave field. Optimum parameters for the silicon carbide phase formation have been determined by varying reaction time and reaction temperature. The powders have been characterized for their particle size, surface area, phase composition (X-r...

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carb...

The mobility of carriers in the channel of silicon carbide is significantly lower than in equivalent silicon devices. This results in a significant increase in on-state resistance in comparison to theoretical predictions and is hindering the uptake of silicon carbide technology in commercial circuits. The density of interface traps at the interface be‐ tween silicon carbide and the dielectric f...

In the current study, effect of varying Silicon Carbide particulate on the mechanical properties of Aluminium based alloy automobile brake disc component was investigated. The result of experimental investigation on mechanical properties of Silicon Carbide particle reinforced Aluminium Matrix was achieved for composite brake disc using universal tensile test machine, Rockwell hardness testing m...

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. T...

We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute threedimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4Hand 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known grow...

Silicon carbide (SiC) has found a variety of engineering applications due to its superior properties. However, it is still desirable to study cost-effective processes to machine silicon carbide. This paper presents the results of a designed experimental investigation into Rotary Ultrasonic Machining (RUM) of silicon carbide. A four-variable two-level full factorial design was employed to reveal...

This paper investigates the mechanisms of material removal in dynamic friction polishing of polycrystalline diamond composites through the analysis of polishing-produced debris. The specimens used were PCD compacts composed of diamond and silicon carbide. In order to uncover the debris’ structure, high-resolution transmission electron microscopy (HRTEM), electron diffraction and electron energy...

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in ...