In this paper, we present a new method for direct-write laser fabrication of thin-film amorphous silicon (a-Si) on crystalline silicon substrate induced by femtosecond laser irradiation. Using megahertz frequency femtosecond laser pulses makes it possible to control laser fluence in the amorphization range of silicon under ambient condition. Finally, a thin-film of amorphous silicon is generate...

− Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material properties of thin film silicon layers enables to assess their potential and limitations when used in photovoltaic devices. A brief review of th...

Selective exposure of a hydrogenated amorphous silicon ~a-Si:H! film to a room-temperature hydrogen plasma using a patterned masking layer and a subsequent anneal at 600 °C, results in patterned polycrystalline and amorphous silicon regions. However, most of the hydrogen in the amorphous silicon is lost, leading to severe degradation in its properties. In this letter, we report the rehydrogenat...

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...

In this paper, we present the design and fabrication of hybrid dielectric-metallic back surface reflectors, for applications in thin film amorphous silicon solar cells. Standard multilayer distributed Bragg reflectors, require a large number of layers in order to achieve high reflectance characteristics. As it turns out, the addition of a metallic layer, to the base of such a multilayer mirror,...

The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, n...

Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...

Thin silicon films of varying thickness were deposited on foreign substrates by electron-cyclotron resonance chemical vapor deposition from SiH4-H2 mixtures at 600 K. Optical thickness measurements, Rutherford backscattering, and transmission electron microscopy reveal that a thin amorphous interlayer of some 10 nm thickness has formed upon the substrate, before the growth of a microcrystalline...

Solar cells are becoming a highly promising alternative energy source for various markets. In the last five years or so a tremendous amount of research effort has been put into increasing the efficiency of solar cell technology and reducing its manufacturing cost. It is believed that success in both of these areas will further propel its use in various markets. The two major structures commerci...

We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subt...