A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, 2s, 2p, C O 1s core levels.

Si3N4 thin film grown by low-pressure chemical vapor deposition was measured high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, 2s, 2p, N 1s are reported.

The state-selective positive-ion and negative-ion dissociation pathways of gaseous and condensed Si(CH(3))(2)Cl(2) following Cl 2p, Cl 1s, and Si 2p core-level excitations have been characterized. The excitations to a specific antibonding state (15a(1) (*) state) of gaseous Si(CH(3))(2)Cl(2) at the Cl 2p, Cl 1s, and Si 2p edges produce significant enhancement of fragment ions. This ion enhancem...

Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and DFT calculations, 2010, Physical Review B. The Si 2p and Ge 3d core levels are investigated on the c͑4 ϫ 2͒ reconstructed surfaces of Si͑001͒ and Ge͑001͒, respectively. Calculated surface core-level shifts are obtained both with and without final state effects included. Significant core-level shifts are...

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavyion storage-ring TSR. The experimental electron-ion collision energy range of 0–186 eV encompassed the 2p nl n′l′ dielectronic recombination (DR) resonances associated with 3s→ nl core excitations, 2s 2p 3s nl n′l′ resonances associated with 2s → nl (n = 3, 4) core excitations, and 2p 3s nl n′l′ re...

We have carried out a bulk-sensitive high-resolution photoemission experiment on Mn5Si3. The measurements are performed for both core level and valence band states. The Mn core level spectra are deconvoluted into two components corresponding to different crystallographic sites. The asymmetry of each component is of noticeable magnitude. In contrast, the Si 2p spectrum shows a simple Lorentzian ...

The structure of 3 nm and 15 nm diamond-like carbon films, grown on Si(001) by filtered cathodic arc, was studied by angle-resolved X-ray photoelectron spectroscopy (ARXPS) and transmission electron microscopy (TEM). The ARXPS data was deconvolved by employing simultaneous-fitting, which allowed for a clear deconvolution of the Si 2p and C 1s spectra into their different chemical contributions....

An ibuprofen tablet was characterized by x-ray photoelectron spectroscopy. The sample fixed to a stainless-steel holder with copper double-sided adhesive tape. Survey spectra, C 1s, O N Si 2p, and Na 1s core level spectra were acquired. results showed the presence of carbon oxygen, elements that are part chemical structure ibuprofen; however, these can also be excipients. In addition, nitrogen,...

In situ chemical methods for preparing atomically-clean surfaces of Si3N4 thin films in ultra-high vacuum (UHV) have been studied using X-ray and ultraviolet photoemission, electron energy loss and Auger electron spectroscopies. Prior to the UHV studies, the films (grown ex situ on Si(1 0 0) wafers by low-pressure chemical vapor deposition) were characterized using primarily infrared reflection...

Nitrogen incorporation in HfO2/SiO2 films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO2 blanket films deposited by atomic layer deposition on either SiO2 or NH3 treated Si 100 substrates have been subjected to NH3 and N2 anneal processing. Several high resolution techniques including electron microscopy ...