High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor...

Fowler et al., "Planar Superlattice Structure'', IBM Technical Disclosure Bulletin, vol. 12, No. 12, May 1970, pp. 2237-2237a. . Heiblum, "Ballistic Electrons and Holes Observed m a Semiconductor," Optics News, Oct. 1988, pp. 13-16. Gaylord et al., "Semiconductor Superlattice Electron Wave Interference Filters", Appl. Phys. Lett., 53(21), Nov. 21, 1988, pp. 2047-2049. Thielen, "Design of Multil...

The study of the radiation hardness subterahertz source from a Gunn diode oscillator and multiplier, based on semiconductor superlattice GaAs/AlAs was continued. dependences output power frequency before after neutron irradiation are experimentally measured. dependence to with fluences 3.5·10 12 , 2.85·10 13 10 14 cm -2 has been analytically estimated. Keywords: Radiation hardness, superlattice...

We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free electron laser, in a large frequency range ~5–12 THz!. The responsivity showed strong minima at frequen...

The atomic and electronic structures of semiconductor heterostructures including steps, misfit dislocations and interface disorder are studied by using the densityfunctional tight-binding (TB) method. Atomic structures of misfit dislocations both edge type 1/2 <110> (001) and 60°dislocations in the semiconductor heterostructures, like Si-Ge superlattices and GaAs/Si systems are studied by using...

An analysis of wave front motion in weakly coupled doped semiconductor superlattices is presented. If a dimensionless doping is sufficiently large, the superlattice behaves as a discrete system presenting front propagation failure and the wave fronts can be described near the threshold currents J(i) (i=1,2) at which they depin and move. The wave front velocity scales with current as |J-J(i)|(1/...

A charge carrier confined in a quasi-one-dimensional semiconductor helical nanostructure in the presence of an electric field normal to the axis of the helix is subjected to a periodic potential proportional to the strength of the field and the helix radius. As a result, electronic properties of such nanohelices are similar to those of semiconductor superlattices with parameters controlled by t...

We develop a semiclassical theory of the nondegenerate parametric amplification in a single miniband of superlattice. We present the formulas describing absorption and gain of signal and idler fields in superlattice and analyze the limiting cases of strong and weak dissipation. We show how the well-known Manley-Rowe relations arise in the tight-binding lattice in the weak dissipation limit. Our...