نتایج جستجو برای: semiconductor quantum dot
تعداد نتایج: 361260 فیلتر نتایج به سال:
We propose an on-demand single-photon source for quantum cryptography using a metal–insulator–semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under consideration is only nanometres in diameter. As in conventional metal–insulator–semiconductor capacitors, our system can also be biased into the inversion re...
In this review, we address the extrinsic dephasing mechanism of spectral diffusion that dominates the decoherence in semiconductor quantum dots at cryogenic temperature. We discuss the limits of random telegraph and Gaussian stochastic noises, and we describe the general effect of motional narrowing in the context of spectral noise. We emphasize the unconventional phenomenology of motional narr...
We demonstrate reversible quenching of the photoluminescence from single CdSe/ZnS colloidal quantum dots embedded in thin films of the molecular organic semiconductor N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) in a layered device structure. Our analysis, based on current and charge carrier density, points toward field ionization as the dominant photoluminescence q...
The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value o...
Universal multiple-qubit gates can be implemented by a set of universal single-qubit gates and any one kind of entangling two-qubit gate, such as a controlled-NOT gate. For semiconductor quantum dot qubits, two-qubit gate operations have so far only been demonstrated in individual electron spin-based quantum dot systems. Here we demonstrate the conditional rotation of two capacitively coupled c...
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other f...
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of ...
We present an overview of experimental steps taken towards using the spin of a single electron trapped in a semiconductor quantum dot as a spin qubit [Loss and DiVincenzo, Phys. Rev. A 57, 120 (1998)]. Fabrication and characterization of a double quantum dot containing two coupled spins has been achieved, as well as initialization and single-shot read-out of the spin state. The relaxation time ...
Development of a Silicon Semiconductor Quantum Dot Qubit with Dispersive Microwave Readout
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