In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal–metal, metal–semiconductor, and semiconductor– semiconductor junctions are all...

We propose a method for treating the boundary conditions at the exposed surface of semiconductor nanostructures, and compare the results from simulations based on such a method with experimental measurements on test devices defined electrostatically by metal gates on AlGaAs/GaAs heterostructures. In particular, we show that the pinch-off voltage of quantum point contacts realized with split gat...

We investigate the radiative properties of plasmonic core-shell nanowire resonators and, using boundary element method calculations, demonstrate enhanced radiative decay rate by up to 3500 times in nanoscale compound semiconductor/metal cavities. Calculation of the local density of optical states enables identification of new types of modes in cavities with mode volumes on the order of 10(-4)(λ...

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field mo...

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profi...

The chapter highlights selected electric charge transport phenomena studied recently in low dimensional structures of DMSs. The first part describes transport phenomena related to the quantum interference of scattered electron waves in diffusive transport regime at the boundary of metalinsulator transition. The second part is devoted to Landau quantization of electronic states, as quantum Hall ...

We report soft x-ray photoemission studies of metal/molecular-beam epitaxy (MBE)GaAs(lOO) interfaces formed at low temperature. Our results indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky's original description of metal-semiconductor contacts. These results confirm the predictions of a selfconsistent model of metal-semiconductor i...

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Articles you may be interested in Fully complementary metal-oxide-semiconductor compatible nanoplasmonic slot waveguides for silicon electronic photonic integrated circuits Appl. Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy Monolithically integrated low-loss silic...

We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both...