We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can profile with nanometer spat...

Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction fabricated and demonstrated with extremely low forward voltage reduced reverse current. The formation mechanism of proposed. To obtain G-doping, the surfaces p-type p+-type silicon substrates were patterned indents depth d = 30 nm. Ti/Ag contacts deposited on top G-doped lay...

The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode, which can serve in electronics as a rectifier, logic gate, voltage regulator (Zener diode), switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED), laser diode, photodetector, or solar cell. In a relatively simplified view of semiconductor ma...

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor-superconductor-n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the band structure of the electrodes. The pSn junction is modeled by the Bogoliubov-de Gennes equations and an extension of the Blonder-Tinkham-Klapwijk theory ...

Z. Li, R. C. Picu, R. Muralidhar, and P. Oldiges Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, Yorktown Heights, New York 10598, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, H...

We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (E(F)). The reconstructed junction has only one state near E(F), indicating that these localized states are related to the oct...

The temperature dependence of electrical resistivity was measured for three materials: a conductor (copper), a semiconductor (a carbon resistor), and a doped semiconductor (a pn junction). As expected, the resistance of the copper sample decreased with temperature and the resistance of the carbon resistor increased with temperature. The temperature coefficient of resistance of Cu was calculated...

Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workf...