نتایج جستجو برای: semiconducting silicon

تعداد نتایج: 86286  

2013
Hailong Wang Luis A. Zepeda-Ruiz George H. Gilmer Moneesh Upmanyu

Vapour-liquid-solid route and its variants are routinely used for scalable synthesis of semiconducting nanowires, yet the fundamental growth processes remain unknown. Here we employ atomic-scale computations based on model potentials to study the stability and growth of gold-catalysed silicon nanowires. Equilibrium studies uncover segregation at the solid-like surface of the catalyst particle, ...

Journal: :Nanoscale 2012
Romuald Intartaglia Annette Barchanski Komal Bagga Alessandro Genovese Gobind Das Philipp Wagener Enzo Di Fabrizio Alberto Diaspro Fernando Brandi Stephan Barcikowski

Biofunctionalized silicon quantum dots were prepared through a one step strategy avoiding the use of chemical precursors. UV-Vis spectroscopy, Raman spectroscopy and HAADF-STEM prove oligonucleotide conjugation to the surface of silicon nanoparticle with an average size of 4 nm. The nanoparticle size results from the size-quenching effect during in situ conjugation. Photoemissive properties, co...

Journal: :ACS applied materials & interfaces 2015
Seung-Kyun Kang Gayoung Park Kyungmin Kim Suk-Won Hwang Huanyu Cheng Jiho Shin Sangjin Chung Minjin Kim Lan Yin Jeong Chul Lee Kyung-Mi Lee John A Rogers

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycr...

2012
Y. Iikura K. Takakura T. Fujii N. Hiroi F. Hasegawa T. Suemasu Y. Maeda H. Funakubo K. J. Reeson

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 10 cm above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-q...

2011
Le Chen Sudhakar Shet Houwen Tang Kwang-soon Ahn Heli Wang Yanfa Yan John Turner Mowafak Al-Jassim

Related Articles Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge2Sb2Te5 chalcogenide from firstprinciple calculations J. Appl. Phys. 110, 063716 (2011) Pressure-induced phase transformations during femtosecond-laser doping of silicon J. Appl. Phys. 110, 053524 (2011) Effect of deposition parameters and semi-empirical relations between non-linear refractive index...

2011
Sushobhan Avasthi Yabing Qi Grigory K. Vertelov Jeffrey Schwartz Antoine Kahn James C. Sturm

a r t i c l e i n f o In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface...

2013
Ling Sun Jianjun Wang Elmar Bonaccurso

We introduce a technique for measuring the conductivity of individual hybrid metal, semiconducting core-shell and full-metal conducting particles by a microscopic four-point probe (μ-4PP) method. The four-point probe geometry allows for minimizing contact resistances between electrodes and particles. By using a focused ion beam we fabricate platinum nanoleads between four microelectrodes on a s...

2015
Erfu Liu Yajun Fu Yaojia Wang Yanqing Feng Huimei Liu Xiangang Wan Wei Zhou Baigeng Wang Lubin Shao Ching-Hwa Ho Ying-Sheng Huang Zhengyi Cao Laiguo Wang Aidong Li Junwen Zeng Fengqi Song Xinran Wang Yi Shi Hongtao Yuan Harold Y Hwang Yi Cui Feng Miao Dingyu Xing

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T st...

2013
Sushobhan Avasthi William E. McClain Gabriel Man Antoine Kahn Jeffrey Schwartz James C. Sturm

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1 xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition proces...

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