We develop an analytically solvable model able to qualitatively explain nonhydrogenicexciton spectra observed recently in two-dimensional (20) semiconducting transition-metal dichalcogenides. Our exciton Hamiltonian explicitly includes additional angular momentum associated with the pseudospin degree of freedom unavoidable in 20 semiconducting materials with honeycomb structure. We claim that t...

semiconducting oxides in 20011, research into functional oxide-based, one-dimensional nanostructures has rapidly expanded because of their unique and novel applications in optics, optoelectronics, catalysis, and piezoelectricity. Semiconducting oxide nanobelts are a unique group of quasi-one-dimensional nanomaterials, which have been systematically studied for a wide range of materials with dis...

Perovskite ferroelectric materials exhibit the novel ferroelectric photovoltaic effect, where photon-excited electron–hole pairs can be separated by ferroelectric polarization. Especially, semiconducting ferroelectric materials with small band gaps ( ) Eg have been extensively studied for applications in solar energy conversion. Traditional route for creating semiconducting ferroelectrics requi...

A brief review is provided of the ways electrical properties of semiconducting polymers can be exploited. Emphasis is given to the analysis of electrical conductivity data, in particular to the importance of interchain processes that must be considered along with intrachain processes for bulk conductivity. Among the large variety of possible applications of thin lms of semiconducting polymers, ...

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T st...

Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, ...