The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga2O3 is known as a transparent conducting oxide with an ultra-wide bandgap of ~ 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide ban...

The advent of flexible optoelectronic devices has accelerated the development of semiconducting polymeric materials. We seek to replace conventional expensive semiconducting photodetector materials with our cost-effective composite system. We demonstrate in this work the successful fabrication of a photoconductive composite film of poly(3-hexylthiophene-2,5-diyl) (P3HT) mixed with NaYF4:Yb,Er n...

Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide an...

We report a comprehensive study of the gate-induced electromodulated transmittance of infrared light by single-walled carbon nanotube (SWNT) thin films. The observed electromodulation is significantly enhanced by utilizing large diameter SWNTs, increasing the ratio of semiconducting to metal SWNTs, and by decreasing the SWNT film thickness. The amplitude of the effect reported herein ( approxim...

This work explores the assembly of large-area heterostructures comprised of a film of silica-encapsulated, semiconducting colloidal quantum dots, deposited via the Langmuir-Blodgett method, sandwiched between two graphene sheets. The luminescent, electrically insulating film served as a dielectric, with the top graphene sheet patterned into an electrode and successfully used as a top gate for a...

Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge i...

We succeeded to fabricate p-n heterojunction and bulkheterojunction small-molecular-weight organic thin-film solar cells by combination of dry (p-type = zinc phthalocyanine, n-type = fullerene) and wet (p-type = tetra-tert-butyl zinc phthalocyanine, n-type = [6,6]-phenylC61-buteric acid methyl ester) processes. Relationship between morphologies of semiconducting layers and photovoltaic properti...

We report large electroabsorption susceptibilities in the ultraviolet region for single-walled carbon nanotubes (SWNT) supported on quartz that are approximately 10;{3} larger than the highest values reported to date for any system. The oscillatory behavior is described using a convolution of Airy functions in photon energy ascribing the effect to Franz-Keldysh oscillations. The metallic and se...

We present an innovative wet-chemistry-assisted nanotube-substitution reaction approach for the highly efficient synthesis of boron- and nitrogen-codoped single-walled carbon nanotubes (B(x)C(y)N(z)-SWNTs) in bulk quantities. The as-synthesized ternary system B(x)C(y)N(z)-SWNTs are of high purity and quality and have fairly homogeneous B and N dopant concentrations. Electrical transport measure...