Organic transistor technology holds great promise for creating a conformal, human-safe electronic neural interface. These interfaces must amplify the low, microvolt-range brain signals so they can be utilized in analog and digital applications. Brain signals from sensors must be relayed to the transistor’s gate through the dielectric and semiconductor layers, as well as through an encapsulant w...

In this article, an optimum ferrite beads design method is proposed to suppress the self-sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors (GaN HEMTs). At first, impacts gate loop and power on GaN HEMTs are analyzed. The analysis reveals weak damping effect oscillation. Next, analytical that can achieve maximum effective introduce extra stray inductanc...

This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

This paper presents a novel Current Steering Digital to Analog Converter architecture to reduce area as well as power dissipation. The current cells of conventional binary weighted architecture require larger size of transistors for MSBs. In this paper, same sized current cell transistors for MSBs as that of LSBs and a current mirror circuit is used between the load and MSBs to provide necessar...

A Low Noise Amplifier (LNA) is an important building block in the RF receiver chain. Typically the LNA should provide acceptable gain and high linearity while maintaining low noise and power consumption. To optimize these conflicting goals the so-called Cascode topology is widely used in industry. Here the gain cell is comprised of two transistors, one in common-source and the other in common g...

This paper presents a nano-watt bandgap voltage reference (BGR). The self-cascode structure is provided as proportional-to-absolute-temperature (PTAT) voltage. Due to the low slope of PTAT voltage, divider consisting five similar MOSFET transistors presented. resulting output will be one-fifth complementary-to-absolute-temperature and four-fifths All MOSFETs are standard CMOS biased in sub-thre...

The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in TSMC 0.18-μm CMOS technology present in this paper. Proposed Class E cascode PA topology is a single-stage topology in order to minimize the device stress problem. A parallel capacitor is connected across the transistors for efficiency enrichment also for dominating the effect of parasitic capacitances at ...

A two-stage self-biased cascode power amplifier in 0.18m CMOS process for Class-1 Bluetooth application is presented. The power amplifier provides 23-dBm output power with a power-added efficiency (PAE) of 42% at 2.4 GHz. It has a small signal gain of 38 dB and a large signal gain of 31 dB at saturation. This is the highest gain reported for a two-stage design in CMOS at the 0.8–2.4-GHz frequen...

This paper addresses the issues involved in designing 1V Op-amp in standard digital CMOS technology. Bulk-driving technique is used to circumvent the metal–oxide semiconductor field-effect transistor turn-on (threshold) voltage requirement. The Op-amp will be designed in a Europractice 0.7μm n-well CMOS process having threshold voltage of 0.76V and –1V for NMOS and PMOS respectively. Simple and...