Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Tero Kiuru Name of the doctoral dissertation Characterization, modeling, and design for applications of waveguide impedance tuners and Schottky diodes at millimeter wavelengths Publisher School of Electrical Engineering Unit Department of Radio Science and Engineering Series Aalto University publication series DOCTORAL DISSERT...

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller con...

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifeti...

This paper describes 420GHz subharmonic mixer based on heterogeneous integrated schottky diode designed by University of Electronic Science and Technology of China (UESTC) and fabricated by China Electronics Technology Group Corporation-13 (CETC-13). The whole circuit including schottky diodes is integrated directly on the 50 μm quartz instead of the traditional 12 um GaAs substrate thus the ci...

We report 100 GHz and 200 GHz monolithic slot antenna coupled RTD array oscillators. The IC process for the array oscillators incorporates 0.1μm InGaAs/AlAs Schottky-collector RTDs (SRTDs) vertically integrated above AlInGaAs Schottky-diode stabilizers which suppress parasitic oscillations in the DC bias circuit. A quasi-optical transmitter/receiver set up using the RTD oscillator as transmitte...

A room-temperature Schottky diode-based WM-86 (WR-0.34) harmonic mixer was developed to build high-resolution spectrometers, and multipixel receivers in the terahertz (THz) region for applications such as radio astronomy, plasma diagnostics, and remote sensing. The mixer consists of a quartz-based local oscillator (LO), intermediate-frequency (IF) circuits, and a GaAs-based beam-lead THz circui...

Following a brief historical overview on the origin and the evolution of Schottky noise we discuss applications in the field of beam diagnostics in particle accelerators. A very important aspect of Schottky diagnostics is the fact that it is a non perturbing method. Essentially statistics based, it permits to extract beam relevant information from rms (root mean square) noise related to the mov...

We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C26H16N2) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (VOC) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumin...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...