Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier ...

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

In this study, electrochemical behaviour of passive films formed on AISI 316L stainless steel (AISI 316L) in three acidic solutions concentrations (0.3, 0.6, and 0.9M HNO3) under open circuit potential conditions were evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS) techniques. The potentiodynamic polarization results showed that...

This study focuses on the semiconductor properties of passive films formed on AISI 420 stainless steel immersed in four nitric acid solutions under open circuit potential (OCP) conditions. For this purpose, the passivation parameters and semiconductor properties of passive films were derived from potentiodynamic polarization and Mott–Schottky analysis, respectively. The OCP plots showed that th...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

The novel characteristics of a new Schottky rectifier structure, known as the lateral merged double Schottky (LMDS) rectifier, on 4H-SiC are explored theoretically and compared with those of the compatible conventional 4H-SiC Schottky rectifiers. The anode of the proposed lateral device utilizes the trenches filled with a high barrier Schottky (HBS) metal to pinch off a low barrier Schottky (LB...

To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)–voltage (V) and capacitance (C)–voltage (V) and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely lo...

Monolayer MoS2 has a promising optoelectronics property, with bandgap in the visible range; material is potential candidate for solar cell applications. In this work, we grew monolayers using low-pressure chemical vapor deposition approach. To produce uniform wafer-scale monolayer films, precursors molybdenum dioxide (MoO2) and sulfur (S) are utilized. Atomic force microscopy was used to quanti...