GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal dissipation, which should be mainly attributed to the removal of sapphire and the good thermal c...

Polyaminoboranes [N(R)H-BH2]n (1: R = H, 2: R = Me) were pyrolyzed on a range of substrates: silicon, metal foils (stainless steel, nickel, and rhodium), and sapphire wafers, as well as on Al2O3 and AlN powders. The pyrolysis of 2 on a Si-wafer resulted in porous nanostructures containing hexagonal-boron nitride (h-BN). In the case of 1 or H3N·BH3 as precursor, using rhodium foil as substrate a...

Billions of light emitting diodes LEDs are used today in traffic control, automotive headlights, flat panel display technology, mobile devices, back lighting, projection, and general illumination applications. With the dramatic growth in LEDs, manufacturers are looking for technologies to increase production yield and decrease cost. Sapphire wafer singulation into miniature dies is one of the c...

Abstract In this study we report chip fabrication process that allows the laser lift-off of sapphire substrate for transfer GaN based thin film flip to carrier wafer. The includes 365-nm ultraviolet LED wafer align bonding with through-AlN-via and lift-off. n-holes diameter 100 µm were etched on epilayers accessing n-type GaN. Through-AlN-via size was 110-µm filled by Cu electroplating method e...

A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 150 A/cm2. on-wafer external quantum efficiency was 0.021% 7 emission 655 nm. grown exhibited 116 redshift when compared co-loaded sapphire. This attributed the difference in strain state for lay...

Indium–gallium nitride (InxGa12xN) single-quantum-well ~SQW! light emitting diodes ~LEDs!, grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film InxGa12xN SQW LED structures were first bonded onto a n -Si substrate using a transient-liquid-phase Pd–In wafer-bonding process followed by a laser lift-off technique to remove the sapphire gro...

Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over wafer scale prior its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) be powerful technique measure symmetry, lattice constants, and in-plane orientation dom...