High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scat...

We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time condition at room temperature. Although energy for was very low, that film/sapphire approximately 1 J m − 2 and more than sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer nm thick, observed interface Al2O3/Al2O3,...

Two types of micron-diamond films were prepared on YG6 substrate by hot filament chemical vapor deposition(HFCVD) method. Morphology and orientation of crystalline growth were evaluated by SEM and XRD. Diamond film coated tools and sapphire wafer’ surface before and after lapping experiment  were contrasted. The results indicated that a significant change in Raman spectrum of two types of micro...

The SAPPHIRE system is a powerful, extensible, object-oriented toolkit allowing researchers to rapidly build and configure customized speech analysis tools. Implemented in Tcl/Tk and C, the current version of SAPPHIRE provides a wide range of functionality, including the ability to configure and run the SUMMIT speech recognition system. We now use SAPPHIRE widely in almost all aspects of our sp...

Sapphire fiber based temperature sensors are exceptional in their ability to operate at temperatures above 1000oC and as high as 1800oC. Sapphire fiber technology is emerging and the fiber is available commercially. Sapphire fiber has a high loss, is highly multi-mode and does not have a solid cladding, but it is nonetheless very useful in high temperature applications. Of the available interfe...

Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...

Single-crystal sapphire (α-Al2O3) is a hard and brittle material. Due to its highly crystalline nature, the fracture behavior of sapphire is strongly related to its crystal structure, and understanding the effects of crystal structure on the crack propagation of sapphire is essential for the successful application of this important material (e.g., as wafers in the electronics industry). In the ...

Gallium nitride (GaN) thin films on sapphire substrates were successfully separated and transferred onto Si substrates by pulsed UVlaser processing. A single 600 mJ/cm, 38 ns KrF excimer laser pulse was directed through the transparent substrate to induce a rapid thermal decomposition of the GaN at the GaN/sapphire interface. The decomposition yields metallic Ga and N2 gas that allows separatio...

Hollow-sapphire and metal-dielectric-coated hollow-glass waveguides have been used to deliver CO(2) laser power for industrial laser applications. The transmission, bending loss, and output-beam properties of these waveguides are described. The bore sizes of the hollow-sapphire waveguides were 1070 and 790 μm, and the hollow-glass waveguide had a bore of 700 μm. The waveguides ranged in length ...