نتایج جستجو برای: rf pecvd

تعداد نتایج: 34809  

2000
I. Pereyra C. A. Villacorta

We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the e ect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments...

Journal: :Korean Journal of Materials Research 2004

2006
S. Ramachandran L. Tao T. H. Lee S. Sant L. J. Overzet M. J. Goeckner M. J. Kim G. S. Lee W. Hu

In this work, antiwear nanoimprint templates were made by depositing and patterning diamondlike carbon DLC films on Si and quartz. A capacitively coupled plasma enhanced chemical vapor deposition PECVD system was configured to deposit 100 nm–1 m thick DLC films on Si and quartz substrates. These films were characterized with Raman spectroscopy, electron energy loss spectroscopy, atomic force mi...

Journal: :Nanotechnology 2008
Zhiqiang Luo Sanhua Lim Yumeng You Jianmin Miao Hao Gong Jixuan Zhang Shanzhong Wang Jianyi Lin Zexiang Shen

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...

2002
R. J. Koval Chi Chen G. M. Ferreira A. S. Ferlauto J. M. Pearce P. I. Rovira C. R. Wronski R. W. Collins

In studies of hydrogenated amorphous silicon (a-Si:H) n – i – p solar cells fabricated by rf plasma-enhanced chemical vapor deposition ~PECVD!, we have found that the maximum open circuit voltage (Voc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum...

2010
Burak Caglar Enric Bertran Eric Jover

Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...

Journal: :Journal of Materials Engineering and Performance 2023

Abstract In this study, siloxane has been used for the protection of metal artifacts from corrosion in form transparent barrier coating films because their good adhesion to substrate. The effect oxygen plasma pre-treatment on properties thin film silver-copper alloy substrate was investigated. Radiofrequency plasma-enhanced chemical vapor deposition (RF-PECVD) process. Surface identification an...

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