Available online 4 November 2011

In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

GP-SIMD, a novel hybrid general purpose SIMD architecture, addresses the challenge of data synchronization by in-memory computing, through combining data storage and massive parallel processing. In this paper, we explore a resistive implementation of the GP-SIMD architecture. In resistive GP-SIMD, a novel resistive row and column addressable 4F2 crossbar is utilized, replacing the modified CMOS...

The surface morphology, elemental composition, and nanohardness of thin fullerite–aluminum films with different atomic fractions metal are investigated by scanning electron atomic-force microscopies, X-ray spectral microanalysis nanoindentation. obtained the method resistive evaporation in vacuum from a combined atomic-molecular flux Al atoms C60 molecules on single-crystal silicon substrates o...

UNLABELLED A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the ...

Transparent SnO2 thin films were deposited on porcelain substrates using a chemical vapor deposition technique based on the hydrolysis of SnCl4 at elevated temperatures. A reduced pressure self-contained evaporation chamber was designed for the process where the pyrolysis of SnCl4 at the presence of water vapor was carried out. Resistive gas sensors were fabricated by providing ohmic contacts o...

Resistive switching (RS) and Resistive Random Access Memories (ReRAMs) that exploit it have attracted huge interests for next generation non volatile memory (NVM) applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the RS between two different resistive states, usually High (HRS, High res...

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the...