Here we present the physics and device characteristics of high performance strain-compensated MOCVD-grown 1200 nm InGaAs and 1300–1400 nm InGaAsN quantum well (QW) lasers. Utilizing the GaAsP barriers surrounding the highly strained InGaAsN QW active regions, high performance QW lasers have been realized from 1170 nm up to 1400 nm wavelength regions. The design of the InGaAsN QW active region u...

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

PURPOSE To determine recommended dose, dose-limiting toxicity, safety profile, pharmacokinetics, preliminary antitumor activity, and exploratory pharmacodynamics of SAR3419, an antibody-drug conjugate targeting CD19, administered alone by intravenous infusion weekly (qw), in a dose-escalation phase I study in patients with refractory/relapsed (R/R) non-Hodgkin lymphoma (NHL). EXPERIMENTAL DES...

Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520–525 nm. Based on a self-consistent six-band k.p method, band structures of both two-layer staggered InxGa12xN/InyGa12yN QW and three-layer staggered InyGa12yN/InxGa12xN/InyGa12yN QW structures are investigated as active region to enh...

Very recently Patel et al. [1] constructed a quantum walk (QW) on a line without using a coin toss instruction, and analyzed the asymptotic behavior of the walk on the line and its escape probability with an absorbing wall. In fact the QW investigated by them can be considered as a class of quantum cellular automata on the line (see [2, 3, 4], for examples), so we call their non-coined QW a qua...

Here, we contribute to the continuing development of the quasi-wavelet (QW) model of turbulence that is currently being used in simulations of sound propagation and scattering in the turbulent atmosphere. We show that a QW model of temperature fluctuations exists for any physically reasonable temperature spectrum of isotropic homogeneous turbulence, including the widely used von Kármán spectrum...

In this article the notions of semi weak orthogonality and semi weak factorization structure in a category $mathcal X$ are introduced. Then the relationship between semi weak factorization structures and quasi right (left) and weak factorization structures is given. The main result is a characterization of semi weak orthogonality, factorization of morphisms, and semi weak factorization structur...

Hybrid samples based on ZnO colloidal nanocrystals (NCs) deposited on AlGaN/GaN quantum well (QW) structures with different top barrier thickness d = 3, 6 and 9 nm are studied by time-resolved photoluminescence. Thermal behavior of the QW exciton lifetime in the hybrids and in the bare QW structures has been compared and it has been found that the QW exciton recombination rate increases in the ...

The optical properties and nanostructures of two InGaN/GaN quantum-well (QW) samples of slightly different structures are compared. In one of the samples, InN interfacial layers of a few monolayers are added to the structure between wells and barriers for improving the QW interface quality. Compared with the standard barrier-doped QW sample, the addition of the InN interfacial layers does impro...