UNLABELLED We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The...

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Related Articles In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 ...

In the mid-infrared spectral region, where continuous wave room temperature operation of the QCL devices was achieved in the previous phase of the program, the main goal will be to further broaden the frequency range over which these high performances are achieved. Another important topic is the fabrication of devices with a very large frequency tuning capability, which will enable the spectros...

a simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. we found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency thz qcls.in low frequenc...

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