Interest in quantum dot mode-locked lasers (QD MLLs) has grown in recent years since their first demonstration in 2001 as applications for optical time domain multiplexing, arbitrary waveform generation, and optical clocking are anticipated. Ultrafast pulses below 1 ps have been reported from QD MLLs using intensity autocorrelation techniques, but so far detailed characterization examining the ...

Abstract The quantum defect (QD) is an important issue that demands prompt attention in high-power fiber lasers. A large QD may aggravate the thermal load laser, which would impact frequency, amplitude noise and mode stability, threaten security of laser system. Here, we propose demonstrate a cladding-pumped Raman (RFL) with less than 1%. Using gain boson peak phosphorus-doped to enable claddin...

We demonstrate two simple methods to fabricate QD-stabilized toluene microdroplets in water as whispering gallery mode microscale resonators in an all-liquid phase. The toluene microdroplets show size-dependently high Q-factors up to 5100 resulting from the stable QD-loaded microdroplets. The highly QD-stabilized toluene microdroplet resonators in the all-liquid phase would be promising for mul...

Introduction: Future high-speed systems will, in all probability, require the monolithic integration of electronic circuits and optoelectronic components on silicon substrates. An urgent need in such technology is the development of high performance and reliable electrically-injected light sources that can be integrated on silicon in a CMOS-compatible process. Self-organised quantum dot (QD) la...

Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor ( H-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the ...

An InGaAsN single-layer quantum dot ~QD! laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition ~MOCVD!. The ridge-waveguide edge emitting laser diodes ~LD! were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed ...

Abstract The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range 17 °C–97 °C. lasing indicates that n-type technique reduced threshold current density InAs QD across full and narrowed near field spot. However, short-cavity lasers, doped laser switches from gro...

Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. approach avoids issues associated with use phosphorus compounds, which are evident in crystal growth conventional C/L‐band QD lasers, making manufacturing process safer, simpler, and more cost‐effective. The threshold current density fabricated laser was ...

Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into accou...

Abstract Possibility of tailoring the light-current characteristic (LCC) shape in quantum dot (QD) lasers by varying uniformity QDs is discussed. Making QD ensemble less uniform results roll-over LCC. The second branch LCC appears with making even uniform.