In this study, we report on the deposition of a highly crystalline AlN interfacial layer GaN at 330 °C via plasma-enhanced atomic (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as Al N precursors, respectively. The crystallinity mass density examined using X-ray diffraction (XRD) reflectivity (XRR) measurements, respectively, chemical bonding states concentrations determined by photo...