نتایج جستجو برای: piezoresistive sensor

تعداد نتایج: 189324  

2014
Ankit Mishra Ishita Bahal Jagrati Arya Abhishek Pandey Shabana Urooj

The present paper peruses MEMS based piezoresistive pressure sensor and its fabrication techniques. Simulation of the pressure sensor is done by using COMSOL Multiphysics software for P-type silicon piezoresistor. The deflection of N-type silicon diaphragm depends upon the Young’s modulus of the material and varies with the amount of force applied to the diaphragm. The simulation result emphasi...

Journal: :Micromachines 2015
Jian-qiu Huang Fei Li Min Zhao Kai Wang

This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system) piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the piezoresistive humidity sensor. Compared with a bulk micromachined humidity sensor, the machining precision and the sizes of the surface micromach...

2018
Vasileios Mitrakos Philip J. W. Hands Gerard Cummins Lisa Macintyre Fiona C. Denison David Flynn Marc P. Y. Desmulliez

Piezoresistive pressure sensors capable of detecting ranges of low compressive stresses have been successfully fabricated and characterised. The 5.5 × 5 × 1.6 mm3 sensors consist of a planar aluminium top electrode and a microstructured bottom electrode containing a two-by-two array of truncated pyramids with a piezoresistive composite layer sandwiched in-between. The responses of two different...

2013
Jeffrey Bates Prashant Tathireddy Sebastian Buetefisch

Stimuli-responsive hydrogels can be used to convert miniature pressure sensors into novel chemomechanical sensors via confinement of the hydrogel sample between a porous membrane and a piezoresistive diaphragm. Chemomechanical sensors could prove beneficial in a variety of applications, including continuous monitoring of bioreactors and biomedical systems. In this study, one hydrogel compositio...

2012
Adrian Freed

Speaker cones and other driver diaphragms are usually too fragile to be good sites for touch interaction. This can be solved by employing new, lightweight piezoresistive e-textiles with flat, rectangular, stiff surfaces used in full-range drivers from HiWave. Good low-frequency performance of piezoresistive fabric has an advantage over piezoelectric sensing for this situation. Applications of t...

2000
R. Osorio M. Mayer J. Schwizer H. Baltes

For the first time an integrated piezoresistive microsensor, used for monitoring ball bonding, is rigorously simulated. The sensor is based on a CMOS n + -diffusion and located in situ below a standard bonding pad. It measures a value related to the ultrasound stress which is dissipated during ball bonding. We report on a 2D simulation tool based on the implementation of the governing equation ...

2004
K. H. Peng C. M. Uang

The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. The influence due to temperature variation is manifested as a change in the span, bridge resistance, and offset of the sensor. In order to reduce the thermal drifts of the offset and span of the piezoresistive pressure sensor, a Half-B...

2012
Genki Yoshikawa Terunobu Akiyama Frédéric Loizeau Kota Shiba Sebastian Gautsch Tomonobu Nakayama Peter Vettiger Nico F. de Rooij Masakazu Aono

We present a new generation of piezoresistive nanomechanical Membrane-type Surface stress Sensor (MSS) chips, which consist of a two dimensional array of MSS on a single chip. The implementation of several optimization techniques in the design and microfabrication improved the piezoresistive sensitivity by 3~4 times compared to the first generation MSS chip, resulting in a sensitivity about ~10...

2011
Mohd Haris M. Khir Peng Qu Hongwei Qu

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology...

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