Microwave photoconductivity decay (μ-PCD) method was applied to evaluate the effects of chemical composition and Ar plasma induced damage on the bulk and the surface states in amorphous In-Ga-ZnO (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor perfor...

Estimates of the majority photocarrier mobility-lifetime (pt) product obtained from time-of-flight transient photoconductivity and from steady-state photo-conductivity are compared. It is shown that in principle both experiments measure the integral of the transient drift mobility; the demonstration is based solely on linear response theory and is independent of the specific microscopic transpo...

Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...

An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morpholo...

We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the pseudospin selection rule for Dirac-like carriers. The effect can be observed in clean undoped graphene samples and be utilized for light polarization detec...

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene e...

The temperature dependence of magneto-optical and magneto-photoconductivity measurements were carried out in the range of (200-330) K. A home made optical cryostat was used for the measurements. The measured room temperature value of the energy gap was found to be 2.211 eV. The temperature coefficient of energy gap was found to be -5.48×10-4 eV/K obtained by the optical absorption method and -4...

THz radiation is detected by a low-temperature-grown GaAs ~LT-GaAs! photoconductive antenna probed with a 1.55 mm probe laser. The detection efficiency is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser intensity, two-step photoabsorption mediated by midgap states in LT-GaAs is suggested, instead of the two-photo...

Persistent photoconductivity was observed in strontium titanate (SrTiO(3)) single crystals. When exposed to sub-bandgap light (2.9 eV or higher) at room temperature, the free-electron concentration increases by over 2 orders of magnitude. After the light is turned off, the enhanced conductivity persists for several days, with negligible decay. From positron lifetime measurements, the persistent...

In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating t...