نتایج جستجو برای: photo transistor
تعداد نتایج: 46866 فیلتر نتایج به سال:
Related Articles An all C60 vertical transistor for high frequency and high current density applications APL: Org. Electron. Photonics 5, 250 (2012) Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors Appl. Phys. Lett. 101, 212104 (2012) Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesem...
This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/IZO) thin-film transistors. The field-effect mobility (μFE) and photo-bias stability of the double-channel device were improved by increasing the thickness of the front IZO film (t(int)) compared to the single-ZTO-channel device. A high-mobility (approximately 32.3 cm(2)/Vs) ZTO/IZO transistor with e...
Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8-0.9...
Graphene photo-detectors functionalized by colloidal quantum dots (cQDs) have been demonstrated to show effective photo-detection. Although the transfer of charge carriers or energy from the cQDs to graphene is not sufficiently understood, it is clear that the mechanism and efficiency of the transfer depends on the morphology of the interface between cQDs and graphene, which is determined by th...
High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...
We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of ph...
Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lantha...
We exploit the dependence of the electrical conductivity of graphene on a local electric field, which can be abruptly changed by charge carriers generated by ionizing radiation in an absorber material, to develop novel highperformance radiation sensors for detection of photons and other kinds of ionizing radiation. This new detection concept is implemented by configuring graphene as a field eff...
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