نتایج جستجو برای: passivation

تعداد نتایج: 3893  

Journal: :Biosensors & bioelectronics 2013
Jee-Yeon Kim Kyungyong Choi Dong-Il Moon Jae-Hyuk Ahn Tae Jung Park Sang Yup Lee Yang-Kyu Choi

The present work aims to improve the sensitivity of an electrical biosensor by simply changing a surface property of the passivation layer, which covers the background region except for the sensing site for electrical isolation among adjacent interconnection lines. The hydrophobic passivation layer dramatically enhances the sensitivity of the biosensor when compared with a hydrophilic passivati...

2008
Michio Kondo Stefaan De Wolf Hiroyuki Fujiwara

Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlation between the passivation quality and the interface nature between thin amorphous layers and an underlying c-Si substrate for understanding...

2008
Hyun-jun Cho Jin-Cherl Her Kang-il Lee Ho-young Cha Kwang-Seok Seo

1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...

2007
S. Olibet E. Vallat-Sauvain C. Ballif L. Korte L. Fesquet

Standard surface passivation schemes for crystalline silicon solar cells use SiO2 or SiNx. The c-Si surface passivation mechanisms related with these schemes have been elucidated within the framework of interface recombination modeled by an extended SRH formalism: interface recombination centers characteristic of the SiO2 passivation have larger electron (e) than hole (h) capture cross sections...

Journal: :IEICE Transactions 2012
Akihiro Tanabe Masahiro Hanmura Takeyoshi Katoh Hironori Oomori Akira Honma Teruhiko Suzuki

A solution-processed photosensitive passivation layer with a low dielectric constant (PPLD) has been developed for an a-Si thin film transistor. The PPLD has three highly important properties: a low leakage current, low water absorption, and high-transparency. In addition to providing passivation, the PPLD doubles as a planarization layer. The photoactive property of the PPLD is convenient for ...

2012
Woojin Lee Hoechang Kim Dae-Ryong Jung Jongmin Kim Changwoo Nahm Junhee Lee Suji Kang Byungho Lee Byungwoo Park

The effects of surface passivation on the photoluminescence (PL) properties of CdS nanoparticles oxidized by straightforward H2O2 injection were examined. Compared to pristine cadmium sulfide nanocrystals (quantum efficiency ≅ 0.1%), the surface-passivated CdS nanoparticles showed significantly enhanced luminescence properties (quantum efficiency ≅ 20%). The surface passivation by H2O2 injectio...

Journal: :Nanoscale 2015
Chao Zhao Tien Khee Ng Aditya Prabaswara Michele Conroy Shafat Jahangir Thomas Frost John O'Connell Justin D Holmes Peter J Parbrook Pallab Bhattacharya Boon S Ooi

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) ...

Journal: :ACS nano 2013
Susanna M Thon Alexander H Ip Oleksandr Voznyy Larissa Levina Kyle W Kemp Graham H Carey Silvia Masala Edward H Sargent

Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS ...

2001
V. Yelundur A. Rohatgi J - W. Jeong

To improve the bulk minority carrier lifetime in String Ribbon silicon, SiNx induced defect passivation during a post deposition anneal is investigated. Our results indicate that SiNx induced hydrogen passivation is very effective when the SiNx film is annealed in conjunction with a screen-printed AI layer on the back. In addition, it is found that controlled rapid cooling can be used to enhanc...

2014
Rui Liu Zhi Zheng Joshua Spurgeon Xiaogang Yang

An important approach for solving the world's sustainable energy challenges is the conversion of solar energy to chemical fuels. Semiconductors can be used to convert/store solar energy to chemical bonds in an energy-dense fuel. Photoelectrochemical (PEC) water-splitting cells, with semiconductor electrodes, use sunlight and water to generate hydrogen. Herein, recent studies on improving the ef...

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