This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a 5.5 V supply and deliver +32 dBm at 1.85 GHz in a standard 130nm CMOS technology. The PA utilizes four on-chip transformers to combine the outputs of eight Class-D stages. The Class-D stages utilize a cascode configuration, driven by an AC-coupled low-voltage driver, to allow a 5.5 V supply in the 1.2/2.5 V ...

As discussed in Chapter 1, in an outphasing power amplifier system, the AM of a bandpass waveform is transformed into PM of two signals prior to power amplification, and finally recovered by recombining the two amplified signals. As shown in Figure 1.16, with this approach, two highly efficient nonlinear power amplifiers can be used without distorting the original signal. This is the main advan...

In this paper, the design of efficient transmitting architectures is addressed. Taking advantage of the modeling and characterization of novel active devices as GaN HEMT and E-pHEMT, several topologies have been approached. An outphasing transmitter at 770 MHz have been implemented from two class-E RFPA designed over package GaN HEMTs. In addition, for multiband applications, a dual band outpha...

Second Harmonic Class-E PA Design The selected active device for the transmission-line class-E2 PA is the SD57030 transistor provided by STMicroelectronics. It has a maximum drain voltage of 65 V. In an ideal class-E PA in the optimum operating mode with 50% duty cycle and a slope of zero [5], the peak drain voltage is vDmax =3.56 VDD. Since the peak varies with load impedance, a design for vDm...

The generation of RF/microwave power is required not only in wireless communications, but also in applications such as jamming, imaging, RF heating, and miniature dc/dc converters. Each application has its own unique requirements for frequency, bandwidth, load, power, efficiency, linearity, and cost. RF power is generated by a wide variety of techniques, implementations, and active devices. Pow...