A fully integrated 5.5 GHz high-linearity low noise amplifier (LNA) using post-linearization technique, implemented in a 0.18μm RF CMOS technology, is demonstrated. The proposed technique adopts an additional folded diode with a parallel RC circuit as an intermodulation distortion (IMD) sinker. The proposed LNA not only achieves high linearity, but also minimizes the degradation of gain, noise ...

A design of RF down-conversion Gilbert-Cell, with 65 nm CMOS technology, at a supply voltage of 1.8 V, with a new degenerating structure to improve linearity. This architecture opens the way to more integrated CMOS RF circuits and to achieve a good characteristics in terms of evaluating parameters of RF mixers with a very low power consumption (2.17 mW). At 1.9 GHz RF frequency; obtained result...

In this paper, a CMOS low power amplifier based on a high-quality active inductor and implemented by using 0.25-μm 1P5M CMOS standard technology is presented. The amplifier achieves power gain (S21) of 18dB within the -3dB cutoff frequency, bandwidth of 1.3GHz, and power consumption of 18mW under 2.5V power supply in 188 × 174μm silicon area. The input third-order intercept point (IIP3) and the...

A low-voltage and low-power RF mixer for WCDMA applications is presented. The paper presents a novel topology mixer that leads to a better performance in terms of isolation and power consumption for low supply voltage. The measuring results of the proposed mixer achieve: 7dB power conversion gain, 10.4dB double side band (DSB) noise figure, -2dBm input third-order intercept point (IIP3), and th...

A receiver's intermodulation (IM) spurious response attenuation is a measure of the receiver's ability to receive a modulated-input RF signal frequency on its assigned channel frequency in the presence of two interfering continuous wave (CW) tones. The receiver's protection against spurious response interference is a measure of the its ability to discriminate between the input signal at the ass...

In this paper, low-IF receiver planning for Digital European Cordless Telephone (DECT) systems operating around 1.9 GHz is described. A low-IF receiver architecture is chosen, since it allows a high degree of integration. Unlike zero-IF receivers, this architecture does not have a DCoffset or self-reception problem. The main features of the DECT system are presented, including the translation f...

If you have a home-built receiver or transceiver for the amateur bands—or even manufactured equipment—that has proven weak in the front end, this article is for you. You could consider adding a band-pass filter at the input, which is desirable1 for second-order IMD protection; but it will not necessary help the third-order IMD, measured as third-order intercept point or IP3. That is the figure ...

A low-power wideband mixer is designed and implemented in 0.13 µm standard CMOS technology based on resistive feedback current-reuse (RFCR) configuration for the application of cognitive radio receiver. The proposed RFCR architecture incorporates an inductive peaking technique to compensate for gain roll-off at high frequency while enhancing the bandwidth. A complementary current-reuse techniqu...

This work presents a 2.4 GHz low noise amplifier (LNA) for wireless sensor network in CMOS 0.13-μm Silterra process. The forward body bias technique with cascode configuration has been adopted in order to implement a suitable LNA for low power consumption target. The supply voltage was varied from 0.4 V to 0.6 V as to optimize the tradeoffs for LNA performances. The simulation results show that...

The MAX2530 receiver RF front-end IC, using Maxim's advanced SiGe process, was originally designed for cellular-band and PCS band operation. For 450MHz CDMA, the NF (noise figure) and the IIP3 (input third-order intercept) of the low noise amplifier (LNA) are very critical in considering the sensitivity, and the single-tone desensitization effect. This technical note gives the tuning method and...