A contact singularity is a normal singularity (V, 0) together with a holomorphic contact form η on V \ Sing V in a neighbourhood of 0, i.e. η∧(dη) r has no zero, where dim V = 2r + 1. The main result of this paper is that there are no isolated contact singularities.

The stability of trapped dilute Fermi gases against collapse towards large densities is studied. A hermitian effective contact-interaction for all partial waves is derived, which is particularly suited for a mean-field description of these systems. Including the sand p-wave parts explicit stability conditions and critical particle numbers are given as function of the scattering lengths. The p-w...

There are many social psychological theories regarding the nature of prejudice, but only one major theory of prejudice reduction: under the right circumstances, prejudice between groups will be reduced with increased contact. On the one hand, the contact hypothesis has a range of empirical support and has been a major force in social change. On the other hand, there are practical and ethical ob...

The sound propagation mechanisms inside dense granular matter are challenging the attempts to describe it because of the discrete nature of the material. Phenomena like dissipation, scattering, and dispersion are hard to predict based on the material state and/or properties and vice-versa. We propose here a simulation method using dynamic discrete elements in order to get more insight in this p...

Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States; California Institute of Technology, Pasadena, California, 91125, United States, Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125, United States, and Institute for Molecular Engineering, The University of Chicago, 5801 South...

We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H...

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic m...

We investigate a possibility of heating of the loops and other closed magnetic structures in active regions of the solar corona by the flow of solar wind (plus other flows that may be present) across the magnetic field lines (that are perpendicular to the flow), in a similar manner as a conventional MHD generator works. A simple model is formulated which allows to calculate the typical currents...

A two-dimensional, analytical, self-similar solution to the Alfvén wave phase mixing equations is presented for a coronal hole model. The solution shows clearly that the damping of the waves with height follows the scaling predicted by Heyvaerts & Priest 1983 at low heights, before switching to an algebraic decay at large heights. The ohmic dissipation is calculated and it is shown that the max...

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...