There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide...

Nitrogen doping opens possibilities for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in spintronics and optoelectronics. One major obstacle is development of magnetically active N-doped graphene with spin-polarized conductive behavior. However, the effect of nitrogen on the magnetic properties of graphene has so far only been addressed theoreticall...

In this study, we demonstrated nitrogen-doped graphene network supported few-layered graphene shell encapsulated Cu nanoparticles (NPs) (Cu@G-NGNs) as a sensing platform, which were constructed by a simple and scalable in situ chemical vapor deposition (CVD) technique with the assistance of a self-assembled three-dimensional (3D) NaCl template. Compared with pure Cu NPs and graphene decorated C...

The electronic and adsorption properties of graphene can be changed significantly through substitutional doping with nitrogen and nitrogen decoration of vacancies. Here ab initio density functional theory with a dispersion correction was used to investigate the stability, magnetic and adsorption properties of nine defects in graphene, including both nitrogen substitutional doping and nitrogen d...

Doping of heteroatoms such as nitrogen into the lattice structure of graphene can tune and tailor the overall electronic properties. N-doped graphene, depending on the nitrogen bonding mode and/or bonding configuration, displays subtly altered properties in comparison to pristine graphene. However, there remains a disappointing shortage of reliable methods for introducing dopants in a controlle...

Based on first principles density functional theory calculations we explored energetics of oxygen reduction reaction over pristine and nitrogen-doped graphene with different amounts of nitrogen doping. The process of oxygen reduction requires one more step than the same reaction catalyzed by metals. Results of calculations evidence that for the case of light doped graphene (about 4% of nitrogen...

Large-area substitutional phosphorus-nitrogen co-doped monolayer graphene is directly synthesized on a Cu surface by chemical vapor deposition using molecules of phosphonitrilic chloride trimer as the phosphorus and nitrogen sources. The doping levels of both phosphorus and nitrogen atoms decrease as a function of the growth temperature. In contrast, the doping effect is enhanced with temperatu...

The current study both synthesizes and uses four compounds of graphene oxide (GO), nitrogen doped graphene oxide (ND-GO), high nitrogen doped graphene oxide (HND-GO), and three dimensional high nitrogen doped graphene oxide (3D-HND-GO) in order to remove a model anionic dye, Congo red (CR) from wastewaters. It also compares their carbon nano-structure, with regard to removal efficiency and find...

Chemical doping of graphene with small boron nitride (BN) domains has been shown to be an effective way of permanently modulating the electronic properties in graphene. Herein we show a facile method of growing large area graphene doped with small BN domains on copper foils using a single step CVD route with methane, boric acid powder and nitrogen gas as the carbon, boron and nitrogen sources r...

Doping graphene with heteroatoms can alter the electronic and electrochemical properties of the starting material. Contrasting properties should be expected when the doping is carried out with electron donating species (n-type dopants) or with electron withdrawing species (p-type dopants). This in turn can have a profound influence on the electroanalytical performance of the doped material bein...