Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

In this chapter, the physical properties of group III-nitride compound semiconductors are reviewed in the context to act as semiconducting material in photoelectrocatalytic solar fuel structures. The band alignments in the InN-GaN-AlN-InN alloy system are summarized and discuss with respect to potential catalysts HOMO and LUMO states, providing efficient charge transfer in photoelectrochemical ...

Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo study of carrier dynamics in two structures based on the same design scheme for emission at 2 THz, consisting of GaN /AlGaN or Ga...

Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epita...

One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found tha...

N.B.: When citing this work, cite the original publication. Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y., (2017), Graphene integration with nitride semiconductors for high power and high frequency electronics, Physica Status Solidi (a) applications and materials science, 214(4). https://dx.doi.org/10.1002/pss...

This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexap...