A fast and accurate analytical method was established for the simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by graphite furnace atomic absorption spectrometry using a slurry sampling technique and a Hitachi Model Z-9000 atomic absorption spectrometer. The slurry samples were prepared by the ultrasonication of silicon carbide or si...

stabilizations and atomic level quadrupole coupling constant (cq) properties have been investigated for graphene–like monolayers (g–monolayers) of boron nitride (bn), boron phosphide (bp), aluminum nitride (aln), and aluminum phosphide (alp) structures. to this aim, density functional theory (dft) calculations have been performed to optimize the model structures and also to evaluate the cq para...

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameter...

The following work reports the design, numerical, analytical and simulation characterization of an Aluminum Nitride MEMS resonator. The paper offers a comparison of rectangular plate MEMS resonator (length extensional and width extensional mode shapes) and ring shape MEMS resonator. It also demonstrates the contour Eigen modes of resonators and their equivalent electric circuit model (BVD). Fur...

Aluminum nitride is characterized by a non-recoverable volume phase transformation from the wurtzite (hexagonal) to the rocksalt (cubic) structure that commences about 22 GPa, accompanied by a volume strain of about 20%. A study of the manifestation of this large volume change under shock loading was made with four uniaxial strain impact experiments. Particle velocity histories of the shock and...

Schemes to achieve strong coupling between mechanical modes of aluminum nitride microstructures and microwave cavity modes due to the piezoelectric effect are proposed. We show that the strong-coupling regime is feasible for an on-chip aluminum nitride device that is either enclosed by a three-dimensional microwave cavity or integrated with a superconducting coplanar resonator. Combining with o...

Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH(3) and evaporated aluminum at an elevated temperature to be converted into densely pack...

Aluminum Gallium Nitride is an exciting new semiconductor that is not yet fully understood. Detailed electrical analysis can be undertaken using cathodoluminescence spectroscopy, and the results correlated to the relative abundance of the aluminum, gallium, and nitrogen, as well as oxygen impurities.