The temperature dependence of Λ-graded InGaN solar cells is studied through simulation using nextnano software. Λ-Graded structures have been designed by increasing and then decreasing the indium composition in epitaxial layers. Due to polarization doping, layers p-type n-type doping arise without need for impurity doping. Different individual are varying alloy profile from GaN maximum concentr...

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...