Carriers scattering in the inversion channel of nMOSFET dominates the drain current. This paper presents an effective electron mobility model for the pocket implanted nano scale n-MOSFET. The model is developed by using two linear pocket profiles at the source and drain edges. The channel is divided into three regions at source, drain and central part of the channel region. The total number of ...

Received Jan 9, 2018 Revised Mar 2, 2018 Accepted Mar 18, 2018 There is a growing demand of miniaturization of the electronics world. A brief discussion for simulating and fabrication of the MOSFET based pressure sensor in nanoscale is being reviewed in this paper. Aim of this paper is to collect all the scaling challenges and their solutions together to make understanding the facts of the MOSF...

Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has b...

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1−xGex/Si, is proposed for the improvement of device characteristics. For analyzing the nano-scale DG MOSFET, a two-dimensional quantum-mechanical (QM) approach for solving the coupled Poisson-Schrödinger equations is reported. The advantages of a strained Si channel of DG MOSFET are ...

Bias Temperature Instability (BTI) causes significant threshold voltage shift in MOSFET using Hafnium-dioxide (HfO2) High-k dielectric material. Negative BTI and Positive BTI are two types of BTI effects observed in p-channel and n-channel MOSFET. BTI affects the stability and reliability of conventional six transistor (6T) SRAM design in nano-scale CMOS technology. Eight transistor (8T) and Te...

Dielectric material between capacitor electrodes increases the capacitance. However, when the electric field exceeds a threshold, electric breakdown in the dielectric discharges the capacitor suddenly and the stored energy is lost. We show that nano vacuum tubes do not have this problem because (i) electric breakdown can be suppressed with quantization phenomena, and (ii) the capacitance is lar...

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...

Future technologies required nano-scale CMOS memory to be operating in low power consumption. The minimum operating voltage of the nano-scale CMOS played as a main factor to reduce the power consumption. Consequently, there are some limitations and obstacles to achieve the objective for several design, material and novel structural solutions, which are promising and reliable. In this research, ...