نتایج جستجو برای: n junction

تعداد نتایج: 1021820  

2015
Xichao Zhang Motohiko Ezawa Dun Xiao G. P. Zhao Y. W. Liu Yan Zhou

Magnetic skyrmions are topologically protected nanoscale objects, which are promising building blocks for novel magnetic and spintronic devices. Here, we investigate the dynamics of a skyrmion driven by spin wave in magnetic nanowire. It is found that (i) the skyrmion is first accelerated and then decelerated exponentially, (ii) it can turn L-corners with both right and left turns, (iii) it alw...

Journal: :IEEE Trans. Instrumentation and Measurement 2000
Olfa Kanoun

The p–n junction i–u characteristic model is decisive for the accuracy enhancement of calibration-free temperature measurement. In this paper, we give a survey of adapted physically-based p–n junction i–u characteristic models, such as the Ebers–Moll2, the Ebers–Moll3, and the Gummel–Poon model. Furthermore, we build new models through polynomial extensions to the fundamental Shockley model. Th...

Journal: :Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 2013

Journal: :international journal of nano dimension 0
monir kamalian department of physics, science and research branch, islamic azad university, tehran, 1477893855, iran.سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (islamic azad university science and research branch)سازمان های دیگر: nano-optoelectronics lab, sheykh bahaee research complex, science and research branch, islamic azad university, tehran, iran afshin abbasi department of chemistry, university of qom, qom, 3716146611, iran.سازمان اصلی تایید شده: دانشگاه قم (qom university)سازمان های دیگر: nano-optoelectronics lab, sheykh bahaee research complex, science and research branch, islamic azad university, tehran, iran yousef seyed jalili department of physics, science and research branch, islamic azad university, tehran, 1477893855, iran.سازمان اصلی تایید شده: دانشگاه آزاد اسلامی علوم و تحقیقات (islamic azad university science and research branch)

in this study we investigate the effect of atoms such as b, n, ge and sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using dft calculation method. these elements were attached to the one end of the carbon nanotube. we considered four different structure designs as possible candidates for a p-n junction device. the electrical properties of these structur...

Journal: :IEEE Transactions on Electron Devices 2009

Journal: :Microelectronics Reliability 2011
V. V. N. Obreja C. Codreanu D. Poenar Octavian Buiu

Typical blocking I–V characteristics are shown and analyzed for PN junctions exhibiting a breakdown region above 1000 V from commercial diodes and power MOSFETs. The leakage reverse current of PN junctions from commercial silicon devices available at this time has a flowing component at the semiconductor–passivant material interface around the junction edge. Part of the plotted experimental cur...

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