This article is based on “Class-E High-Efficiency Power Amplifiers, from HF to Microwave,” Proceedings of the IEEE International Microwave Symposium, June 1998, Baltimore; and “ClassE Switching-Mode High-Efficiency Tuned RF Microwave Power Amplifier: Improved Design Equations,” Proceedings of the IEEE International Microwave Symposium, June 2000, Boston; both by Nat Sokal, © IEEE 1998, 2000.—Ed.

Quantum limited amplifiers are sought after for a wide range of applications within quantum technologies and sensing. One promising candidate is the travelling wave parametric amplifier which exploits the non-linear kinetic inductance of a superconducting transmission line. This type of microwave amplifier promises to deliver a high gain, a quantum limited noise performance over several GHz ban...

Fig.2 Amplifier under test. Amplifiers can operate in classes A, B, AB, C, D, E and F [2]. We tested class A amplifier made by „Microwave Power Devices“, Model: LWA 4690-1/1837, based on bipolar devices (Fig.2). Usually, 1dB compression point, gain and two-tone third-order intercept point are measured as the amplifier figure of merit. As specified by manufacturer, the frequency range of the amp...

This paper shows the results of research on the optical control of a GaAs chip monolithic amplifier, and is an extension of previous work by our group in the field of optical-microwave interaction [1-3]. The amplifier was originally designed for the transmitter stage of an indoor mobile communications system in the 2.4 GHz band. The possibilities of optical control of this amplifier are evidenc...

Employing 130-nm IBM CMOS model parameters, the design of a power-efficient single-stage microwave amplifier is presented in this paper. An optimization technique for the amplifier forward gain is proposed through careful selection of process elements without compromising the architecture’s high degree of isolation and resistance to reflection-loss. A novel mechanism to match port-impedances of...

Broad-band microwave packaging of a travelingwave amplifier with an on-chip bandwidth of 2–50 GHz is described. Techniques to reduce overall insertion losses and to extend the low-frequency cutoff of the amplifier while maintaining gain-flatness are discussed. The packaged amplifier modules exhibit excellent performance from 100 kHz to 50 GHz. They are demonstrated as modulator drivers and rece...

Abstract A Monte Carlo simulation is reported for analog integrated circuits and is based on the modification of the failure rate of each component due to interaction effects of the failed components. The Monte Carlo technique is the methodology used to treat such circuits, since they are independent of the number of components and the degree of system complexity. The reliability model is appli...

A four-device broadband solid-state power amplifier, which is based on radial waveguide power-dividing/combining circuit, has been investigated in this work. The fabricated power amplifier combining four monolithic microwave integrated circuit power amplifiers shows a 12–16.6 dB small-signal gain over a broadband from 6 to 14 GHz. The measured maximum output power at 1 dB compression is 25.6 dB...