نتایج جستجو برای: metalorganic

تعداد نتایج: 1143  

2011
Martin Klein

Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...

2007
D. L. KAISER M. D. VAUDIN L. D. ROTTER Z. L. WANG C. S. HWANG R. B. MARINENKO J. G. GILLEN

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...

2011
I Tsiaoussis Volodymyr Khranovskyy G P Dimitrakopulos J Stoemenos Rositsa Yakimova I. Tsiaoussis V. Khranovskyy G. P. Dimitrakopulos J. Stoemenos R. Yakimova B. Pecz

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz, Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, 2011, JOURNAL OF APPLIED PHYSICS, (109), 4, 043507. http://dx.doi.org/10.1063/1.3549140 Copyright: American Institute of Physics http://www....

2005
Andrew W. Metz John R. Ireland Jun Ni Kenneth R. Poeppelmeier Carl R. Kannewurf Tobin J. Marks

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2014
Wan Sik Hwang Amit Verma Hartwin Peelaers Vladimir Protasenko Sergei Rouvimov Huili Xing Alan Seabaugh Wilfried Haensch Chris Van de Walle Zbigniew Galazka Martin Albrecht Roberto Fornari Debdeep Jena

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

2012
Kamran Forghani

We report on the metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on sapphire substrates. The effect of precursor flow rate and nucleation layer (NL) on the film quality was investigated. The films were characterized using AFM, XRD and PL. We could realize AlN films with very smooth surfaces and narrow symmetric XRD peaks indicating low screw/mixed type dislocation densities in th...

Journal: :The Journal of Physical Chemistry A 1997

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